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1. general description the tda8932 is a high ef?ciency class-d ampli?er with low power dissipation. the typical output power is 2 15 w in stereo half-bridge application (r l =4 w ) or 1 30 w typical in full-bridge application (r l =8 w ). due to the low power dissipation the device can be used without any external heat sink when playing music. if proper cooling via the printed-circuit board is implemented, a continuous output power of 2 15 w is feasible. due to the implementation of thermal foldback, even for high supply voltages and/or lower load impedances, the device remains operating with considerable music output power without the need for an external heat sink. the device has two full-differential inputs driving two independent outputs. it can be used as mono full-bridge con?guration (btl) or as stereo half-bridge con?guration (se). 2. features n operating voltage from 10 v to 36 v asymmetrical or 5 v to 18 v symmetrical n mono-bridged tied load (full-bridge) or stereo single-ended (half-bridge) application n application without heatsink using thermally enhanced small outline package n high ef?ciency and low-power dissipation n thermally protected and thermal foldback n current limiting to avoid audio holes n full short-circuit proof across load and to supply lines (using advanced current protection) n switchable internal or external oscillator (master-slave setting) n no pop noise n full-differential inputs 3. applications n flat panel television sets n flat panel monitor sets n multimedia systems n wireless speakers n mini and micro systems n home sound sets tda8932 class-d audio ampli?er rev. 02 12 december 2006 preliminary data sheet
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 2 of 45 nxp semiconductors tda8932 class-d audio ampli?er 4. quick reference data [1] output power is measured indirectly; based on r dson measurement. [2] r s is the series resistance of inductor of low-pass lc ?lter in the application. 5. ordering information table 1. quick reference data v p = 22 v; f osc = 320 khz; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit supplies v p supply voltage asymmetrical supply 10 22 36 v i p supply current sleep mode; no load - 0.6 1 ma i q(tot) total quiescent current operating mode; no load, no snubbers and no ?lter connected - 4080ma stereo se channel; r s < 0.1 w [1] [2] p o(rms) rms output power continuous time output power per channel; thd+n = 10 %; f i = 1 khz r l =4 w ; v p =22v 14 15 - w r l =8 w ; v p =30v 14 15 - w short time output power per channel; thd+n = 10 %; f i = 1 khz r l =4 w ; v p =29v 23 25 - w mono btl; r s < 0.1 w [1] [2] p o(rms) rms output power continuous time output power; thd+n = 10 %; f i = 1 khz r l =4 w ; v p =12v 14 15 - w r l =8 w ; v p =22v 28 30 - w short time output power; thd+n = 10 %; f i = 1 khz r l =8 w ; v p =29v 47 50 - w table 2. ordering information type number package name description version tda8932t so32 plastic small outline package; 32 leads; body width 7.5 mm sot287-1
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 3 of 45 nxp semiconductors tda8932 class-d audio ampli?er 6. block diagram fig 1. block diagram 001aad757 2 10 31 8 28 29 27 3 12 tda8932 oscillator 26 boot1 v ddp1 out1 v ssp1 pwm modulator driver high driver low ctrl manager ctrl pwm modulator protections: ovp, ocp, otp, uvp, tf, wp stabilizer 11 v stabilizer 11 v regulator 5 v mode v dda 15 14 in1p oscref oscio v dda v ssd in1n inref in2p in2n 6 powerup 4 diag 7 cgnd 21 20 22 23 boot2 v ddp2 out2 25 stab1 24 stab2 18 11 dref hvpref 30 hvp1 19 hvp2 v ssp2 driver high driver low v dda v ssp1 v ssp2 v ssd v dda v ssa half supply voltage 5 engage 13 9 test v ssa 1, 16, 17, 32 v ssd(hw)
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 4 of 45 nxp semiconductors tda8932 class-d audio ampli?er 7. pinning information 7.1 pinning 7.2 pin description fig 2. pin con?guration so32 tda8932t v ssd(hw) v ssd(hw) in1p oscio in1n hvp1 diag v ddp1 engage boot1 powerup out1 cgnd v ssp1 v dda stab1 v ssa stab2 oscref v ssp2 hvpref out2 inref boot2 test v ddp2 in2n hvp2 in2p dref v ssd(hw) v ssd(hw) 001aad756 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 18 17 20 19 22 21 24 23 26 25 32 31 30 29 28 27 table 3. pin description symbol pin description v ssd(hw) 1 negative digital supply voltage and handle wafer connection in1p 2 positive audio input for channel 1 in1n 3 negative audio input for channel 1 diag 4 diagnostic output; open-drain engage 5 engage input to switch between mute mode and operating mode powerup 6 power-up input to switch between sleep mode and mute mode cgnd 7 control ground; reference for powerup, engage and diag v dda 8 positive analog supply voltage v ssa 9 negative analog supply voltage oscref 10 input internal oscillator setting (only master setting) hvpref 11 decoupling of internal half supply voltage reference inref 12 decoupling for input reference voltage test 13 test signal input; for testing purpose only in2n 14 negative audio input for channel 2 in2p 15 positive audio input for channel 2 v ssd(hw) 16 negative digital supply voltage and handle wafer connection v ssd(hw) 17 negative digital supply voltage and handle wafer connection dref 18 decoupling of internal (reference) 5 v regulator for logic supply
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 5 of 45 nxp semiconductors tda8932 class-d audio ampli?er hvp2 19 half supply output voltage 2 for charging single-ended capacitor for channel 2 v ddp2 20 positive power supply voltage for channel 2 boot2 21 bootstrap high-side driver channel 2 out2 22 pwm output channel 2 v ssp2 23 negative power supply voltage for channel 2 stab2 24 decoupling of internal 11 v regulator for channel 2 drivers stab1 25 decoupling of internal 11 v regulator for channel 1 drivers v ssp1 26 negative power supply voltage for channel 1 out1 27 pwm output channel 1 boot1 28 bootstrap high-side driver channel 1 v ddp1 29 positive power supply voltage for channel 1 hvp1 30 half supply output voltage 1 for charging single-ended capacitor for channel 1 oscio 31 oscillator input in slave con?guration or oscillator output in master con?guration v ssd(hw) 32 negative digital supply voltage and handle wafer connection table 3. pin description continued symbol pin description
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 6 of 45 nxp semiconductors tda8932 class-d audio ampli?er 8. functional description 8.1 general the tda8932 is a mono full-bridge or stereo half-bridge audio power ampli?er using class-d technology. the audio input signal is converted into a pulse width modulated (pwm) signal via an analog input stage and pwm modulator. to enable the output power diffusion metal oxide semiconductor (dmos) transistors to be driven, this digital pwm signal is applied to a control and handshake block and driver circuits for both the high side and low side. a 2nd-order low-pass ?lter converts the pwm signal to an analog audio signal across the loudspeakers. the tda8932 contains two independent half-bridges with full differential input stages. the loudspeakers can be connected in the following con?gurations: ? mono full-bridge: bridge tied load (btl) ? stereo half-bridge: single-ended (se) the tda8932 contains common circuits to both channels such as the oscillator, all reference sources, the mode functionality and a digital timing manager. the following protections are built-in: thermal foldback, temperature, current and voltage protections. 8.2 mode selection and interfacing the tda8932 can be switched in three operating modes using pins powerup and engage: ? sleep mode: with low supply current. ? mute mode: the ampli?ers are switching idle (50 % duty cycle), but the audio signal at the output is suppressed by disabling the vl-converter input stages. the capacitors on pins hvp1 and hvp2 have been charged to half the supply voltage (asymmetrical supply only). ? operating mode: the ampli?ers are fully operational with output signal. ? fault mode. both pins powerup and engage refer to pin cgnd. t ab le 4 shows the different modes as a function of the voltages on the powerup and engage pins. [1] in case of symmetrical supply conditions the voltage applied to pins powerup and engage must never exceed the supply voltage (v dda , v ddp1 or v ddp2 ). table 4. mode selection mode pin powerup engage diag sleep < 0.8 v < 0.8 v dont care mute 2 v to 6.0 v [1] < 0.8 v [1] > 2 v operating 2 v to 6.0 v [1] 3 v to 6.0 v [1] >2v fault 2 v to 6.0 v [1] dont care < 0.8 v
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 7 of 45 nxp semiconductors tda8932 class-d audio ampli?er if the transition between mute mode and operating mode is controlled via a time constant, the start-up will be pop free since the dc output offset voltage is applied gradually to the output between mute mode and operating mode. the bias current setting of the vi-converters is related to the voltage on pin engage: ? mute mode: the bias current setting of the vi-converters is zero (vi-converters disabled) ? operating mode: the bias current is at maximum the time constant required to apply the dc output offset voltage gradually between mute mode and operating mode can be generated by applying a decoupling capacitor on pin engage. the value of the capacitor on pin engage should be 470 nf. 8.3 pulse width modulation frequency the output signal of the ampli?er is a pwm signal with a carrier frequency of approximately 320 khz. using a 2nd-order low-pass ?lter in the application results in an analog audio signal across the loudspeaker. the pwm switching frequency can be set by an external resistor r osc connected between pins oscref and v ssd(hw) . the carrier frequency can be set between 300 khz and 500 khz. using an external resistor of 39 k w , the carrier frequency is set to an optimized value of 320 khz (see figure 4 ). fig 3. start-up sequence v p powerup dref hvpref hvp1, hvp2 engage 0.43v engage 0.3v engage audio pwm out1, out2 diag oscio 001aae788 operating operating pwm pwm sleep mute operating fault audio audio audio 0.17v engage
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 8 of 45 nxp semiconductors tda8932 class-d audio ampli?er if two or more tda8932 devices are used in the same audio application, it is recommended to synchronize the switching frequency of all devices. this can be realized by connecting all pins oscio together and con?gure one of the tda8932 in the application as clock master, while the other tda8932 devices are con?gured in slave mode. pin oscio is a 3-state input or output buffer. pin oscio is con?gured in master mode as oscillator output and in slave mode as oscillator input. master mode is enabled by applying a resistor while slave mode is entered by connecting pin oscref directly to pin v ssd(hw) (without any resistor). the value of the resistor also sets the frequency of the carrier which can be estimated by the following formula: (1) where: f osc = oscillator frequency r osc = oscillator resistor (on pin oscref) t ab le 5 summarizes how to con?gure the tda8932 in master or slave con?guration. for device synchronization see section 14.6 de vice synchronization . fig 4. oscillation frequency as a function of resistor r osc table 5. master or slave con?guration con?guration pin oscref oscio master r osc > 25 k w to v ssd(hw) output slave r osc =0 w ; shorted to v ssd(hw) input f osc 12.45 10 9 r osc --------------------------- - = 350 450 550 f osc (khz) 250 rosc (k w ) 25 45 40 30 35 001aad758
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 9 of 45 nxp semiconductors tda8932 class-d audio ampli?er 8.4 protection the following protection is included in the tda8932: ? thermal foldback (tf) ? overtemperature protection (otp) ? overcurrent protection (ocp) ? window protection (wp) ? supply voltage protection: C undervoltage protection (uvp) C overvoltage protection (ovp) C unbalance protection (ubp) ? esd the reaction of the device to the different fault conditions differs per protection. 8.4.1 thermal foldback (tf) if the junction temperature of the tda8932 exceeds the threshold level (t j > 140 c) the gain of the ampli?er is decreased gradually to a level where the combination of dissipation (p) and the thermal resistance from junction to ambient [r th(j-a) ] results in a junction temperature around the threshold level. this means that the device will not completely switch off, but remains operational at lower output power levels. especially with music output signals this feature enables high peak output power while still operating without any external heat sink other than the printed-circuit board area. if the junction temperature still increases due to external causes, the otp shuts down the ampli?er completely. 8.4.2 overtemperature protection (otp) if the junction temperature t j > 155 c, then the power stage will shut down immediately. 8.4.3 overcurrent protection (ocp) when the loudspeaker terminals are short-circuited or if one of the demodulated outputs of the ampli?er is short-circuited to one of the supply lines, this will be detected by the ocp. if the output current exceeds the maximum output current (i o(ocp) > 4 a), this current will be limited by the ampli?er to 4 a while the ampli?er outputs remain switching (the ampli?er is not shut down completely). this is called current limiting. the ampli?er can distinguish between an impedance drop of the loudspeaker and a low-ohmic short-circuit across the load or to one of the supply lines. this impedance threshold depends on the supply voltage used: ? in case of a short-circuit across the load, the audio ampli?er is switched off completely and after approximately 100 ms it will try to restart again. if the short-circuit condition is still present after this time, this cycle will be repeated. the average dissipation will be low because of this low duty cycle.
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 10 of 45 nxp semiconductors tda8932 class-d audio ampli?er ? in case of a short to one of the supply lines, this will trigger the ocp and the ampli?er will be shut down. during restart the window protection will be activated. as a result the ampli?er will not start until 100 ms after the short to the supply lines is removed. ? in case of impedance drop (e.g. due to dynamic behavior of the loudspeaker) the same protection will be activated. the maximum output current is again limited to 4 a, but the ampli?er will not switch off completely (thus preventing audio holes from occurring). the result will be a clipping output signal without any artifacts. 8.4.4 window protection (wp) the wp checks the pwm output voltage before switching from sleep mode to mute mode (outputs switching) and is activated: ? during the start-up sequence, when pin powerup is switched from sleep mode to mute mode. in the event of a short-circuit at one of the output terminals to v ddp1 , v ssp1 ,v ddp2 or v ssp2 the start-up procedure is interrupted and the tda8932 waits for open-circuit outputs. because the check is done before enabling the power stages, no large currents will ?ow in the event of a short-circuit. ? when the ampli?er is completely shut down due to activation of the ocp because a short-circuit to one of the supply lines is made, then during restart (after 100 ms) the window protection will be activated. as a result the ampli?er will not start until the short-circuit to the supply lines is removed. 8.4.5 supply voltage protection if the supply voltage drops below 10 v, the undervoltage protection (uvp) circuit is activated and the system will shut down directly. this switch-off will be silent and without pop noise. when the supply voltage rises above the threshold level, the system is restarted again after 100 ms. if the supply voltage exceeds 36 v the overvoltage protection (ovp) circuit is activated and the power stages will shut down. it is re-enabled as soon as the supply voltage drops below the threshold level. the system is restarted again after 100 ms. it should be noted that supply voltages > 40 v may damage the tda8932. two conditions should be distinguished: 1. if the supply voltage is pumped to higher values by the tda8932 application itself (see also section 14.3 ), the ovp is triggered and the tda8932 is shut down. the supply voltage will decrease and the tda8932 is protected against any overstress. 2. if a supply voltage > 40 v is caused by other or external causes, then the tda8932 will shut down, but the device can still be damaged since the supply voltage will remain > 40 v in this case. the ovp protection is not a supply voltage clamp. an additional unbalance protection (ubp) circuit compares the positive analog supply voltage (v dda ) and the negative analog supply voltage (v ssa ) and is triggered if the voltage difference between them exceeds a certain level. this level depends on the sum of both supply voltages. the unbalance threshold levels can be de?ned as follows: ? low-level threshold: v p(th)(ubp)l < 8 5 v hvpref ? high-level threshold: v p(th)(ubp)h > 8 3 v hvpref
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 11 of 45 nxp semiconductors tda8932 class-d audio ampli?er in a symmetrical supply the ubp is released when the unbalance of the supply voltage is within 6 % of its starting value. t ab le 6 shows an overview of all protection and the effect on the output signal. 8.5 diagnostic input and output whenever a protection is triggered, except for tf, pin diag is activated to low level (see t ab le 6 ). an internal reference supply will pull-up the open-drain diag output to approximately 2.4 v. this internal reference supply can deliver approximately 50 m a. pin diag refers to pin cgnd. the diagnostic output signal during different short conditions is illustrated in figure 5 . using pin diag as input, a voltage < 0.8 v will put the device into fault mode. 8.6 differential inputs for a high common-mode rejection ratio and a maximum of ?exibility in the application, the audio inputs are fully differential. by connecting the inputs anti-parallel, the phase of one of the two channels can be inverted, so that the ampli?er can operate as a mono btl ampli?er. the input con?guration for a mono btl application is illustrated in figure 6 . in se con?guration it is also recommended to connect the two differential inputs in anti-phase. this has advantages for the current handling of the power supply at low signal frequencies and minimizes supply pumping (see also section 14.8 ). table 6. protection overview protection restart when fault is removed every 100 ms otp no yes ocp yes no wp yes no uvp no yes ovp no yes ubp no yes fig 5. diagnostic output for different short-circuit conditions 001aad759 ? 50 ms shorted load amplifier restart no restart ? 50 ms 0 v 2.4 v v o short to supply line 0 v 2.4 v v o
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 12 of 45 nxp semiconductors tda8932 class-d audio ampli?er 8.7 output voltage buffers when pin powerup is set high, the half supply output voltage buffers are switched on in asymmetrical supply con?guration. the start-up will be pop free since the device starts switching when the capacitor on pin hvpref and the se capacitors are completely charged. output voltage buffers: ? pins hvp1 and hvp2: the time required for charging the se capacitor depends on its value. the half supply voltage output is disabled when the tda8932 is used in a symmetrical supply application. ? pin hvpref: this output voltage reference buffer charges the capacitor on pin hvpref. ? pin inref: this output voltage reference buffer charges the input reference capacitor on pin inref. pin inref applies the bias voltage for the inputs. fig 6. input con?guration for mono btl application 001aad760 in1p out1 audio input in2p in2n in1n out2
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 13 of 45 nxp semiconductors tda8932 class-d audio ampli?er 9. internal circuitry table 7. internal circuitry pin symbol equivalent circuit 1v ssd(hw) 16 v ssd(hw) 17 v ssd(hw) 32 v ssd(hw) 2 in1p 3 in1n 12 inref 14 in2n 15 in2p 4 diag 5 engage 001aad784 1, 16, 17, 32 v ssa v dda 001aad785 2 k w 20 % 2 k w 20 % 48 k w 20 % 48 k w 20 % 2, 15 12 3, 14 hvpref v dda v ssa v/i v/i 001aad786 5 k w 20 % 50 m a 2.4 v 4 v ssa v dda cgnd 001aad787 226 k w 20 % 5 v ssa v dda i ref = 20 m a cgnd 4.6 v
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 14 of 45 nxp semiconductors tda8932 class-d audio ampli?er 6 powerup 7 cgnd 8v dda 9v ssa table 7. internal circuitry continued pin symbol equivalent circuit 001aad788 6 v ssa v dda cgnd 001aad789 7 v ssa v dda 001aad790 8 v ssd v ssa 001aad791 9 v ssd v dda
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 15 of 45 nxp semiconductors tda8932 class-d audio ampli?er 10 oscref 11 hvpref 13 test 18 dref 19 hvp2 30 hvp1 20 v ddp2 23 v ssp2 26 v ssp1 29 v ddp1 table 7. internal circuitry continued pin symbol equivalent circuit 001aad792 10 v ssa v dda i ref 001aad793 11 v ssa v dda 001aad795 13 v ssa v dda 001aad796 18 v ssd v dd 001aad797 19, 30 v ssa v dda 001aad798 20, 29 23, 26
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 16 of 45 nxp semiconductors tda8932 class-d audio ampli?er 21 boot2 28 boot1 22 out2 27 out1 24 stab2 25 stab1 31 oscio table 7. internal circuitry continued pin symbol equivalent circuit 001aad799 21, 28 out1, out2 001aad800 22, 27 v ssp1, v ssp2 v ddp1, v ddp2 001aad801 24, 25 v ssp1, v ssp2 v dda 001aad802 31 v ssd dref
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 17 of 45 nxp semiconductors tda8932 class-d audio ampli?er 10. limiting values [1] v p = v ddp1 - v ssp1 = v ddp2 - v ssp2 . [2] measured with respect to pin inref; v x < v dd + 0.3 v. [3] measured with respect to pin v ssd(hw) ; v x < v dd + 0.3 v. [4] measured with respect to pin cgnd; v x < v dd + 0.3 v. [5] v ss = v ssp1 = v ssp2 ; v dd = v ddp1 = v ddp2. [6] current limiting concept. 11. thermal characteristics [1] measured on a jedec high k-factor test board (standard eia/jesd 51-7) in free air with natural convection. [2] strongly depends on where you measure on the package. table 8. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v p supply voltage asymmetrical supply [1] - 0.3 +40 v v x voltage on pin x in1p, in1n, in2p, in2n [2] - 5+5v oscref, oscio, test [3] v ssd(hw) - 0.3 5 v powerup, engage, diag [4] v cgnd - 0.3 6 v all other pins [5] v ss - 0.3 v dd + 0.3 v i orm repetitive peak output current maximum output current limiting [6] 4-a t j junction temperature - 150 c t stg storage temperature - 55 +150 c t amb ambient temperature - 40 +85 c p power dissipation - 5 w table 9. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient free air natural convection jedec test board [1] - 4144k/w 2 layer application board - 44 - k/w y j-lead thermal characterization parameter from junction to lead --30k/w y j-top thermal characterization parameter from junction to top of package [2] --8k/w
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 18 of 45 nxp semiconductors tda8932 class-d audio ampli?er 12. static characteristics table 10. static characteristics v p = 22 v; f osc = 320 khz; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit supply v p supply voltage asymmetrical supply 10 22 36 v symmetrical supply 5 11 18 v i p supply current sleep mode; no load - 0.6 1 ma i q(tot) total quiescent current operating mode; no load, no snubbers and no ?lter connected - 4080ma series resistance output power switches r dson drain-source on-state resistance t j =25 c - 150 - m w t j = 125 c - 234 - m w power-up input: pin powerup [1] v i input voltage 0 - 6.0 v i i input current v i =3v - 1 20 m a v il low-level input voltage 0 - 0.8 v v ih high-level input voltage 2 - 6.0 v engage input: pin engage [1] v o output voltage 4.2 4.6 5.0 v v i input voltage 0 - 6.0 v i o output current v i = 3 v - 20 40 m a v il low-level input voltage 0 - 0.8 v v ih high-level input voltage 3 - 6.0 v diagnostic output: pin diag [1] v o output voltage protection activated; see t ab le 6 - - 0.8 v operating mode 2 2.5 3.3 v bias voltage for inputs: pin inref v o(bias) bias output voltage with respect to pin v ssa - 2.1 - v half supply voltage pins hvp1 and hvp2 v o output voltage half supply voltage to charge se capacitor 0.5v p - 0.2 0.5v p 0.5v p + 0.2 v i o output current v hvp1 = v o - 1v; v hvp2 =v o - 1v -50-ma pin hvpref v o output voltage half supply reference voltage in mute mode 0.5v p - 0.2 0.5v p 0.5v p + 0.2 v reference voltage for internal logic: pin dref v o output voltage 4.5 4.8 5.1 v
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 19 of 45 nxp semiconductors tda8932 class-d audio ampli?er [1] measured with respect to pin cgnd. [2] measured with respect to pin v ssd(hw) . ampli?er outputs: pins out1 and out2 | v o(offset) | output offset voltage se; with respect to pin hvpref mute mode - - 15 mv operating mode - - 100 mv btl mute mode - - 20 mv operating mode - - 150 mv stabilizer output: pins stab1 and stab2 v o output voltage mute mode and operating mode; with respect to pins v ssp1 and v ssp2 10 11 12 v voltage protection v p(uvp) undervoltage protection supply voltage 8.0 9.5 10 v v p(ovp) overvoltage protection supply voltage 36 38.5 40 v v p(th)(ubp)l low unbalance protection threshold supply voltage v hvpref = 11 v - - 18 v v p(th)(ubp)h high unbalance protection threshold supply voltage v hvpref = 11 v 29 - - v current protection i o(ocp) overcurrent protection output current current limiting 4 5 - a temperature protection t act(th_prot) thermal protection activation temperature 155 - 160 c t act(th_fold) thermal foldback activation temperature 140 - 150 c oscillator reference; pin oscio [2] v ih high-level input voltage 4.0 - 5 v v il low-level input voltage 0 - 0.8 v v oh high-level output voltage 4.0 - 5 v v ol low-level output voltage 0 - 0.8 v n slave(max) maximum number of slaves driven by one master 12 - - table 10. static characteristics continued v p = 22 v; f osc = 320 khz; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 20 of 45 nxp semiconductors tda8932 class-d audio ampli?er 13. dynamic characteristics table 11. switching characteristics v p = 22 v; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit internal oscillator f osc oscillator frequency r osc =39k w - 320 - khz range 300 - 500 khz timing pwm output: pins out1 and out2 t r rise time i o =0a - 10 - ns t f fall time i o =0a - 10 - ns t w(min) minimum pulse width i o =0a - 80 - ns table 12. se characteristics v p = 22 v; r l =2 4 w ; f i = 1 khz; f osc = 320 khz; r s < 0.1 w [1] ; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit p o(rms) rms output power continuous time output power per channel [2] r l =4 w ; v p =22v thd+n = 0.5 %, f i = 1 khz 11 12 - w thd+n = 0.5 %, f i = 100 hz - 12 - w thd+n = 10 %, f i = 1 khz 14 15 - w thd+n = 10 %, f i = 100 hz - 15 - w r l =8 w ; v p =30v thd+n = 0.5 %, f i = 1 khz 11 12 - w thd+n = 0.5 %, f i = 100 hz - 12 - w thd+n = 10 %, f i = 1 khz 14 15 - w thd+n = 10 %, f i = 100 hz - 15 - w short time output power per channel [2] r l =4 w ; v p =29v thd+n = 0.5 % 19 20 - w thd+n = 10 % 23 25 - w thd+n total harmonic distortion-plus- noise p o =1w [3] f i = 1 khz - 0.015 0.05 % f i = 6 khz - 0.08 0.10 % g v(cl) closed-loop voltage gain v i = 100 mv; no load 29 30 31 db |d g v | voltage gain difference - 0.5 1 db a cs channel separation p o = 1 w; f i = 1 khz 70 80 - db svrr supply voltage ripple rejection operating mode [4] f i = 100 hz - 60 - db f i = 1 khz 40 50 - db | z i | input impedance differential 70 100 - k w v n(o) noise output voltage operating mode; r s =0 w [5] - 100 150 m v mute mode [5] - 70 100 m v
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 21 of 45 nxp semiconductors tda8932 class-d audio ampli?er [1] r s is the series resistance of inductor of low-pass lc ?lter in the application. [2] output power is measured indirectly; based on r dson measurement. [3] thd+n is measured in a bandwidth of 20 hz to 20 khz, aes17 brick wall. [4] maximum v ripple = 2 v (p-p); r s =0 w . [5] b = 20 hz to 20 khz, aes17 brick wall. v o(mute) mute output voltage mute mode; v i = 1 v (rms) and f i = 1 khz - 100 - m v cmrr common mode rejection ratio v i(cm) = 1 v (rms) 56 75 - db h po output power ef?ciency p o =15w v p =22v; r l =4 w 90 92 - % v p =30v; r l =8 w 91 93 - % table 12. se characteristics continued v p = 22 v; r l =2 4 w ; f i = 1 khz; f osc = 320 khz; r s < 0.1 w [1] ; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit table 13. btl characteristics v p = 22 v; r l =8 w ; f i = 1 khz; f osc = 320 khz; r s < 0.1 w [1] ; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit p o(rms) rms output power continuous time output power [2] r l =4 w ; v p =12v thd+n = 0.5 %; f i = 1 khz 11 12 - w thd+n = 0.5 %; f i = 100 hz - 12 - w thd+n = 10 %; f i = 1 khz 14 15 - w thd+n = 10 %; f i = 100 hz - 15 - w r l =8 w ; v p =22v thd+n = 0.5 %; f i = 1 khz 23 24 - w thd+n = 0.5 %; f i = 100 hz - 24 - w thd+n = 10 %; f i = 1 khz 28 30 - w thd+n = 10 %; f i = 100 hz - 30 - w short time output power [2] r l =4 w ; v p =15v thd+n = 0.5 % 19 20 - w thd+n = 10 % 23 25 - w r l =8 w ; v p =29v thd+n = 0.5 % 38 40 - w thd+n = 10 % 47 50 - w thd+n total harmonic distortion-plus- noise p o =1w [3] f i = 1 khz - 0.04 0.1 % f i = 6 khz - 0.04 0.1 % g v(cl) closed-loop voltage gain 35 36 37 db svrr supply voltage ripple rejection operating mode [4] f i = 100 hz - 75 - db f i = 1000 hz 70 75 - db sleep; f i = 100 hz [4] -80-db
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 22 of 45 nxp semiconductors tda8932 class-d audio ampli?er [1] r s is the series resistance of inductor of low-pass lc ?lter in the application. [2] output power is measured indirectly; based on r dson measurement. [3] thd+n is measured in a bandwidth of 20 hz to 20 khz, aes17 brick wall. [4] maximum v ripple = 2 v (p-p); r s =0 w . [5] b = 20 hz to 20 khz, aes17 brick wall. | z i | input impedance differential 35 50 - k w v n(o) noise output voltage r s =0 w operating mode [5] - 100 150 m v mute mode [5] - 70 100 m v v o(mute) mute output voltage mute mode; v i = 1 v (rms) and f i = 1 khz - 100 - m v cmrr common mode rejection ratio v i(cm) = 1 v (rms) 56 75 - db h po output power ef?ciency p o = 15 w; v p = 12 v and r l =4 w 88 90 - % p o = 30 w; v p = 22 v and r l =8 w 90 92 - % table 13. btl characteristics continued v p = 22 v; r l =8 w ; f i = 1 khz; f osc = 320 khz; r s < 0.1 w [1] ; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 23 of 45 nxp semiconductors tda8932 class-d audio ampli?er 14. application information 14.1 output power estimation the output power p o at thd+n = 0.5 %, just before clipping, for the se and btl con?guration can be estimated using equation 2 and equation 3 . se con?guration: (2) btl con?guration: (3) where: v p = supply voltage v ddp1 - v ssp1 [v] or v ddp2 - v ssp2 [v] r l = load impedance [ w ] r dson = on-resistance power switch [ w ] r s = series resistance output inductor [ w ] r esr = equivalent series resistance se capacitor [ w ] t w(min) = minimum pulse width [s]; 80 ns typical f osc = oscillator frequency [hz]; 320 khz typical with r osc =39k w the output power p o at thd+n = 10 % can be estimated by: (4) figure 7 and figure 8 show the estimated output power at thd+n = 0.5 % and thd+n = 10 % as a function of the supply voltage for se and btl con?gurations at different load impedances. the output power is calculated with: r dson = 0.15 w (at t j =25 c), r s = 0.05 w , r esr = 0.05 w and i o(ocp) = 4 a (minimum). p o 0.5 % () r l r l r dson r s r esr +++ ---------------------------------------------------------- ? ?? 1t wmin () C f osc () v p 2 8r l ------------------------------------------------------------------------------------------------------------------------------- ----------- - = p o 0.5 % () r l r l 2 + r dson r s + () ----------------------------------------------------- - ? ?? 1t wmin () C f osc () v p 2 2r l ------------------------------------------------------------------------------------------------------------------------------- ------- = p o10 % () 1.25 p o 0.5 % () =
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 24 of 45 nxp semiconductors tda8932 class-d audio ampli?er a. thd+n = 0.5 % b. thd+n = 10 % fig 7. se output power as a function of supply voltage v p (v) 10 40 30 20 20 10 30 40 p o (w) 0 r l = 4 w 6 w 8 w 001aad768 v p (v) 10 40 30 20 20 10 30 40 p o (w) 0 r l = 4 w 6 w 8 w 001aad769 a. thd+n = 0.5 % b. thd+n = 10 % fig 8. btl output power as a function of supply voltage v p (v) 10 40 30 20 40 20 60 80 p o (w) 0 r l = 8 w 6 w 4 w 001aad770 v p (v) 10 40 30 20 40 20 60 80 p o (w) 0 r l = 8 w 6 w 4 w 001aad771
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 25 of 45 nxp semiconductors tda8932 class-d audio ampli?er 14.2 output current limiting the peak output current i o(max) is internally limited above a level of 4 a (minimum). during normal operation the output current should not exceed this threshold level of 4 a otherwise the output signal is distorted. the peak output current in se or btl con?gurations can be estimated using equation 5 and equation 6 . se con?guration: (5) btl con?guration: (6) where: v p = supply voltage v ddp1 - v ssp1 [v] or v ddp2 - v ssp2 [v] r l = load impedance [ w ] r dson = on-resistance power switch [ w ] r s = series resistance output inductor [ w ] r esr = equivalent series resistance se capacitor [ w ] example: a4 w speaker in the btl con?guration can be used up to a supply voltage of 18 v without running into current limiting. current limiting (clipping) will avoid audio holes but it causes a comparable distortion like voltage clipping. 14.3 speaker con?guration and impedance for a ?at frequency response (second-order butterworth ?lter) it is necessary to change the low-pass ?lter components llc and clc according to the speaker con?guration and impedance. t ab le 14 shows the practical required values. 14.4 single-ended capacitor the se capacitor forms a high-pass ?lter with the speaker impedance. so the frequency response will roll-off with 20 db per decade below f -3db (3 db cut-off frequency). i o max () 0.5 v p r l r dson r s r esr +++ ---------------------------------------------------------- 4a i o max () v p r l 2 + r dson r s + () ----------------------------------------------------- - 4a table 14. filter component values con?guration r l ( w ) llc ( m h) clc (nf) se 4 22 680 6 33 470 8 47 330 btl 4 10 1500 6 15 1000 8 22 680
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 26 of 45 nxp semiconductors tda8932 class-d audio ampli?er the 3 db cut-off frequency is equal to: (7) where: f -3db = 3 db cut-off frequency [hz] r l = load impedance [ w ] cse = single-ended capacitance [f]; see figure 28 t ab le 15 shows an overview of the required se capacitor values in case of 60 hz, 40 hz or 20 hz 3 db cut-off frequency. 14.5 gain reduction the gain of the tda8932 is internally ?xed at 30 db for se (or 36 db for btl). the gain can be reduced by a resistive voltage divider at the input (see figure 9 ). when applying a resistive divider, the total closed-loop gain g v(tot) can be calculated by equation 8 and equation 9 : (8) where: g v(tot) = total closed-loop voltage gain [db] g v(cl) = closed-loop voltage gain, ?xed at 30 db for se [db] r eq = equivalent resistance, r3 and z i [ w ] r1 = series resistor [ w ] r2 = series resistor [ w ] table 15. se capacitor values impedance ( w ) cse ( m f) f -3db =60hz f -3db =40hz f -3db =20hz 4 680 1000 2200 6 470 680 1500 8 330 470 1000 f 3db C 1 2 p r l cse ----------------------------------- = fig 9. input con?guration for reducing gain 001aad762 100 k w 470 nf 470 nf audio in r3 r1 r2 g vtot () g vcl () 20 r eq r eq r1 r2 + () + ----------------------------------------- - log + =
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 27 of 45 nxp semiconductors tda8932 class-d audio ampli?er (9) where: r eq = equivalent resistance [ w ] r3 = parallel resistor [ w ] z i = internal input impedance example: substituting r1 = r2 = 4.7 k w ,z i = 100 k w andr3=22k w in equation 8 and equation 9 results in a gain of g v(tot) = 26.3 db. 14.6 device synchronization if two or more tda8932 devices are used in one application it is recommended that all devices are synchronized running at the same switching frequency to avoid beat tones. synchronization can be realized by connecting all oscio pins together and con?gure one of the tda8932 devices as master, while the other tda8932 devices are con?gured as slaves (see figure 10 ). a device is con?gured as master by connecting a resistor between pins oscref and v ssd(hw) setting the carrier frequency. pin oscio of the master is then con?gured as an oscillator output for synchronization. the oscref pins of the slave devices should be shorted to v ssd(hw) con?guring pin oscio as an input. 14.7 thermal behavior (printed-circuit board considerations) the heatsink in the application with the tda8932 is made with the copper on the printed-circuit board (pcb). the tda8932 uses the four corner leads (pins 1, 16, 17 and 32) for heat transfer from the die to the pcb. the thermal foldback will limit the maximum junction temperature to 140 c. r eq r3 z i r3 z i + ------------------ = fig 10. master slave concept in two chip application 001aad761 39 k w v ssd v ssd r osc 100 nf c osc ic1 tda8932 oscref oscio ic2 tda8932 master slave oscio oscref
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 28 of 45 nxp semiconductors tda8932 class-d audio ampli?er equation 10 shows the relation between the maximum allowable power dissipation p and the thermal resistance from junction to ambient. (10) where: r th(j-a) = thermal resistance from junction to ambient t j(max) = maximum junction temperature t amb = ambient temperature p = power dissipation which is determined by the ef?ciency of the tda8932 the power dissipation is shown in figure 20 (se) and figure 27 (btl). the thermal resistance as a function of the pcb area (35 m m copper) is shown in figure 11 . example 1 ? at v p = 30 v and p o =2 15 w into 8 w (thd+n = 10 % continuous), the power dissipation p = 2.3 w at p o = 15 w (see figure 20 ). ? t j(max) = 125 c and t amb =25 c. the required thermal resistance r th(j-a) = 100 / 2.3 = 43 k/w. (1) single layer fr2 pcb; copper plane at device side (100 % coverage). (2) double layer fr4 pcb; copper plane on both sides (100 % coverage). fig 11. thermal resistance as a function of the pcb area r th j a C () t j max () t amb C p ------------------------------------ = pcb area (mm 2 ) 0 10000 8000 4000 6000 2000 001aae336 40 60 80 r th(j-a) (k/w) 20 (1) (2)
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 29 of 45 nxp semiconductors tda8932 class-d audio ampli?er example 2 in case of music output power at 25 % of the rated power, the t j(max) is much lower. ? at v p = 30 v and p o =2 (0.25 15) = 2 3.75 w into 8 w , the power dissipation p = 1.6 w at p o = 3.75 w (see figure 20 ) ? r th(j-a) =43k/w the maximum junction temperature t j(max) = 25 + 1.6 43 = 93.8 c. 14.8 pumping effects when the ampli?er is used in a se con?guration, a so-called 'pumping effect' can occur. during one switching interval, energy is taken from one supply (e.g. v ddp1 ), while a part of that energy is delivered back to the other supply line (e.g. v ssp1 ) and visa versa. when the power supply cannot sink energy, the voltage across the output capacitors of that power supply will increase. the voltage increase caused by the pumping effect depends on: ? speaker impedance ? supply voltage ? audio signal frequency ? value of decoupling capacitors on supply lines ? source and sink currents of other channels the pumping effect should not cause a malfunction of either the audio ampli?er and/or the power supply. for instance, this malfunction can be caused by triggering of the undervoltage or overvoltage protection of the ampli?er. pumping effects in a se con?guration can be minimized by connecting audio inputs in anti-phase and change the polarity of one speaker. this is illustrated in figure 12 . fig 12. se application for reducing pumping effects 001aad763 in1p out1 audio in1 in1n in2n audio in2 in2p out2
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 30 of 45 nxp semiconductors tda8932 class-d audio ampli?er 14.9 se curves measured in reference design a. v p =22v; r l =2 4 w b. v p =30v; r l =2 8 w (1) f i = 6 khz (2) f i = 100 hz (3) f i = 1 khz fig 13. total harmonic distortion-plus-noise as a function of output power 001aad772 10 - 1 10 - 2 10 1 10 2 thd+n (%) 10 - 3 p o (w) 10 - 2 10 2 10 10 - 1 1 (1) (2) (3) 001aad773 10 - 1 10 - 2 10 1 10 2 thd+n (%) 10 - 3 p o (w) 10 - 2 10 2 10 10 - 1 1 (1) (2) (3) a. v p =22v; r l =2 4 w b. v p =30v; r l =2 8 w (1) p o =10w (2) p o =1w fig 14. total harmonic distortion-plus-noise as a function of frequency 001aad774 10 - 1 10 - 2 10 1 10 2 thd+n (%) 10 - 3 f i (hz) 10 10 5 10 4 10 2 10 3 (1) (2) 001aad775 10 - 1 10 - 2 10 1 10 2 thd+n (%) 10 - 3 f i (hz) 10 10 5 10 4 10 2 10 3 (1) (2)
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 31 of 45 nxp semiconductors tda8932 class-d audio ampli?er v i = 100 mv (rms); r i =0 w ; cse = 1000 m f (1) v p = 30 v; r l =2 8 w (2) v p = 22 v; r l =2 4 w v ripple = 500 mv (rms) referenced to ground; r i =0 w (shorted input) (1) v p =30v; r l =2 8 w (2) v p =22v; r l =2 4 w fig 15. gain as a function of frequency fig 16. supply voltage ripple rejection as a function of frequency 001aad776 20 30 40 g v (db) 10 f i (hz) 10 10 5 10 4 10 2 10 3 (1) (2) 001aad777 - 60 - 40 - 80 - 20 0 svrr (db) - 100 f i (hz) 10 10 5 10 4 10 2 10 3 (1) (2) v p = 22 v; r i =0 w ; 20 khz brick-wall ?lter aes17 (1) r l =2 4 w (2) r l =2 8 w p o = 1 w; chvpref = 47 m f (1) v p =22v; r l =2 4 w (2) v p =30v; r l =2 8 w fig 17. signal-to-noise ratio as a function of output power fig 18. channel separation as a function of frequency 001aad778 p o (w) 10 - 2 10 2 10 10 - 1 1 40 80 120 s/n (db) 0 (2) (1) 001aad779 - 60 - 40 - 80 - 20 0 a cs (db) - 100 f i (hz) 10 10 5 10 4 10 2 10 3 (1) (2)
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 32 of 45 nxp semiconductors tda8932 class-d audio ampli?er 14.10 btl curves measured in reference design (1) v p = 22 v; r l =2 4 w ; f i = 1 khz (2) v p = 30 v; r l =2 8 w ; f i = 1 khz (1) v p =22v; r l =2 4 w ; f i = 1 khz (2) v p =30v; r l =2 8 w ; f i = 1 khz fig 19. output power ef?ciency as a function of output power fig 20. power dissipation as a function of output power per channel (two channels driven) p o (w) 020 15 510 001aad780 40 60 20 80 100 h po (%) 0 (2) (1) 001aad781 1.0 2.0 3.0 p (w) 0 p o (w) 10 - 2 10 2 10 10 - 1 1 (2) (1) a. v p =12v; r l =4 w b. v p =24v; r l =8 w (1) f i = 6 khz (2) f i = 1 khz (3) f i = 100 hz fig 21. total harmonic distortion-plus-noise as a function of output power 001aad782 10 - 1 10 - 2 10 1 10 2 thd+n (%) 10 - 3 p o (w) 10 - 2 10 2 10 10 - 1 1 (1) (2) (3) 001aad783 10 - 1 10 - 2 10 1 10 2 thd+n (%) 10 - 3 p o (w) 10 - 2 10 2 10 10 - 1 1 (1) (2) (3)
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 33 of 45 nxp semiconductors tda8932 class-d audio ampli?er a. v p =22v; r l =4 w b. v p =22v; r l =8 w (1) p o =10w (2) p o =1w fig 22. total harmonic distortion-plus-noise as a function of frequency 001aae114 10 - 1 10 - 2 10 1 10 2 thd+n (%) 10 - 3 f i (hz) 10 10 5 10 4 10 2 10 3 (1) (2) 001aae115 10 - 1 10 - 2 10 1 10 2 thd+n (%) 10 - 3 f i (hz) 10 10 5 10 4 10 2 10 3 (2) (1) v i = 100 mv (rms); r i =0 w (1) v p = 12 v; r l =4 w (2) v p = 24 v; r l =8 w v ripple = 500 mv (rms) referenced to ground; r i =0 w (shorted input) (1) r l =4 w (2) r l =8 w fig 23. gain as a function of frequency fig 24. supply voltage ripple rejection as a function of frequency 001aae116 20 30 40 g v (db) 10 f i (hz) 10 10 5 10 4 10 2 10 3 (1) (2) 001aae117 - 60 - 40 - 80 - 20 0 svrr (db) - 100 f i (hz) 10 10 5 10 4 10 2 10 3 (1) (2)
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 34 of 45 nxp semiconductors tda8932 class-d audio ampli?er r i =0 w ; 20 khz brick-wall ?lter aes17 (1) r l =4 w ; v p =15v (2) r l =8 w ; v p =29v fig 25. signal-to-noise ratio as a function of output power 001aae118 p o (w) 10 - 2 10 2 10 10 - 1 1 40 80 120 s/n (db) 0 (2) (1) (1) v p = 12 v; r l =2 4 w ; f i = 1 khz (2) v p = 22 v; r l =2 8 w ; f i = 1 khz (1) v p =12v; r l =2 4 w ; f i = 1 khz (2) v p =22v; r l =2 8 w ; f i = 1 khz fig 26. output power ef?ciency as a function of output power fig 27. power dissipation as a function of output power 001aae119 p o (w) 030 20 10 40 60 20 80 100 h po (%) 0 (2) (1) 001aae120 1.0 2.0 3.0 p (w) 0 p o (w) 10 - 2 10 2 10 10 - 1 1 (2) (1)
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 35 of 45 nxp semiconductors tda8932 class-d audio ampli?er 14.11 typical application schematics (simpli?ed) fig 28. typical simpli?ed application diagram for 2 se (asymmetrical supply) u1 tda8932 v ssd(hw) 470 nf cin cen 470 nf chvp 100 nf cvddp 100 nf csn 470 pf cvddp 100 nf csn 470 pf rsn 10 w rsn 10 w llc llc v ssd(hw) in1p cbo 15 nf 1 m w 1 m w cbo 15 nf cdref 100 nf chvp 100 nf cinref 100 nf chvp 100 nf chvpref 47 m f (25 v) cvddp 220 m f (35 v) cse cse 470 nf cin 470 nf cin 470 nf cin 100 nf cosc 39 k w rosc 10 w rvdda mute control vpa sleep control cvdda 100 nf vp vpa vp gnd oscio in1n hvp1 diag v ddp1 engage boot1 vp vp powerup out1 cgnd v ssp1 v dda stab1 v ssa stab2 oscref v ssp2 hvpref out2 inref cstab 100 nf clc clc boot2 test v ddp2 in2n hvp2 in2p dref v ssd(hw) v ssd(hw) 001aad764 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 18 17 20 19 22 21 24 23 26 25 32 31 30 29 28 27
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 36 of 45 nxp semiconductors tda8932 class-d audio ampli?er fig 29. typical simpli?ed application diagram for 1 btl (asymmetrical supply) u1 tda8932 v ssd(hw) 1 m f cin cen 470 nf chvp 100 nf cvddp 100 nf csn 470 pf csn 470 pf rsn 10 w rsn 10 w llc llc v ssd(hw) in1p cdref 100 nf chvp 100 nf cinref 100 nf chvp 100 nf 1 m f cin 100 nf cosc 39 k w rosc mute control vpa sleep control oscio in1n hvp1 diag v ddp1 engage boot1 vp vp powerup out1 cgnd v ssp1 v dda stab1 v ssa stab2 oscref v ssp2 hvpref out2 inref cstab 100 nf clc clc boot2 test v ddp2 in2n hvp2 in2p dref v ssd(hw) v ssd(hw) 001aaf594 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 18 17 20 19 22 21 24 23 26 25 32 31 30 29 28 27 cvddp 220 m f (35 v) 10 w rvdda cvdda 100 nf vp vpa vp gnd cvddp 100 nf cbo 15 nf 1 m w 1 m w cbo 15 nf rhvp 470 w rhvp 470 w
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 37 of 45 nxp semiconductors tda8932 class-d audio ampli?er fig 30. typical simpli?ed application diagram for 2 se (symmetrical supply) u1 tda8932 v ssd(hw) 470 nf cin cen 470 nf cvddp 100 nf csn 470 pf csn 470 pf rsn 10 w rsn 10 w llc llc v ssd(hw) in1p cdref 100 nf cinref 100 nf cvddp 220 m f (25 v) 470 nf cin 470 nf cin 470 nf cin 100 nf cosc 39 k w rosc 10 w rvdda mute control vdda vssa vss vssa vssa vssa vssa sleep control cvdda 100 nf vdd vdda 10 w rvssa vss vssa vdd vss cvssa 100 nf cvssp 220 m f (25 v) gnd oscio in1n hvp1 diag v ddp1 engage boot1 vdd powerup out1 cgnd v ssp1 v dda stab1 v ssa stab2 oscref v ssp2 hvpref out2 inref cstab 100 nf clc clc boot2 test v ddp2 in2n hvp2 in2p dref v ssd(hw) v ssd(hw) 001aaf595 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 18 17 20 19 22 21 24 23 26 25 32 31 30 29 28 27 vssa cvddp 100 nf cvssp 100 nf vss cvssp 100 nf cbo 15 nf 1 m w 1 m w cbo 15 nf vdd
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 38 of 45 nxp semiconductors tda8932 class-d audio ampli?er 15. test information 15.1 quality information the general quality speci?cation for integrated circuits, snw-fq-611 is applicable. fig 31. typical simpli?ed application diagram for 1 btl (symmetrical supply) u1 tda8932 v ssd(hw) cen 470 nf cvddp 100 nf csn 470 pf csn 470 pf rsn 10 w rsn 10 w llc llc v ssd(hw) in1p cdref 100 nf cinref 100 nf 100 nf cosc 39 k w rosc mute control vdda vssa vssa vssa vssa sleep control oscio in1n hvp1 diag v ddp1 engage boot1 vdd vdd vssa vssa powerup out1 cgnd v ssp1 v dda stab1 v ssa stab2 oscref v ssp2 hvpref out2 inref cstab 100 nf clc clc boot2 test v ddp2 in2n hvp2 in2p dref v ssd(hw) v ssd(hw) 001aaf596 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 18 17 20 19 22 21 24 23 26 25 32 31 30 29 28 27 cvddp 220 m f (25 v) 10 w rvdda cvdda 100 nf vdd vdda 10 w rvssa vss vssa vdd vss cvssa 100 nf cvssp 220 m f (25 v) gnd 1 m f cin 1 m f cin cvddp 100 nf cbo 15 nf 1 m w 1 m w cbo 15 nf vss cvssp 100 nf vss cvssp 100 nf
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 39 of 45 nxp semiconductors tda8932 class-d audio ampli?er 16. package outline fig 32. package outline sot287-1 (so32) unit a max. a 1 a 2 a 3 b p cd (1) e (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec jeita mm inches 2.65 0.1 0.25 0.01 1.4 0.055 0.3 0.1 2.45 2.25 0.49 0.36 0.27 0.18 20.7 20.3 7.6 7.4 1.27 10.65 10.00 1.2 1.0 0.95 0.55 8 0 o o 0.25 0.1 0.004 0.25 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 1.1 0.4 sot287-1 mo-119 (1) 0.012 0.004 0.096 0.089 0.02 0.01 0.05 0.047 0.039 0.419 0.394 0.30 0.29 0.81 0.80 0.011 0.007 0.037 0.022 0.01 0.01 0.043 0.016 w m b p d h e z e c v m a x a y 32 17 16 1 q a a 1 a 2 l p q detail x l (a ) 3 e pin 1 index 0 5 10 mm scale so32: plastic small outline package; 32 leads; body width 7.5 mm sot287-1 00-08-17 03-02-19
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 40 of 45 nxp semiconductors tda8932 class-d audio ampli?er 17. soldering this text provides a very brief insight into a complex technology. a more in-depth account of soldering ics can be found in application note an10365 surface mount re?ow soldering description . 17.1 introduction to soldering soldering is one of the most common methods through which packages are attached to printed circuit boards (pcbs), to form electrical circuits. the soldered joint provides both the mechanical and the electrical connection. there is no single soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount devices (smds) are mixed on one printed wiring board; however, it is not suitable for ?ne pitch smds. re?ow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 17.2 wave and re?ow soldering wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. the wave soldering process is suitable for the following: ? through-hole components ? leaded or leadless smds, which are glued to the surface of the printed circuit board not all smds can be wave soldered. packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. also, leaded smds with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. the re?ow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature pro?le. leaded packages, packages with solder balls, and leadless packages are all re?ow solderable. key characteristics in both wave and re?ow soldering are: ? board speci?cations, including the board ?nish, solder masks and vias ? package footprints, including solder thieves and orientation ? the moisture sensitivity level of the packages ? package placement ? inspection and repair ? lead-free soldering versus pbsn soldering 17.3 wave soldering key characteristics in wave soldering are: ? process issues, such as application of adhesive and ?ux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave ? solder bath speci?cations, including temperature and impurities
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 41 of 45 nxp semiconductors tda8932 class-d audio ampli?er 17.4 re?ow soldering key characteristics in re?ow soldering are: ? lead-free versus snpb soldering; note that a lead-free re?ow process usually leads to higher minimum peak temperatures (see figure 33 ) than a pbsn process, thus reducing the process window ? solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board ? re?ow temperature pro?le; this pro?le includes preheat, re?ow (in which the board is heated to the peak temperature) and cooling down. it is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). in addition, the peak temperature must be low enough that the packages and/or boards are not damaged. the peak temperature of the package depends on package thickness and volume and is classi?ed in accordance with t ab le 16 and 17 moisture sensitivity precautions, as indicated on the packing, must be respected at all times. studies have shown that small packages reach higher temperatures during re?ow soldering, see figure 33 . table 16. snpb eutectic process (from j-std-020c) package thickness (mm) package re?ow temperature ( c) volume (mm 3 ) < 350 3 350 < 2.5 235 220 3 2.5 220 220 table 17. lead-free process (from j-std-020c) package thickness (mm) package re?ow temperature ( c) volume (mm 3 ) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 42 of 45 nxp semiconductors tda8932 class-d audio ampli?er for further information on temperature pro?les, refer to application note an10365 surface mount re?ow soldering description . 18. abbreviations msl: moisture sensitivity level fig 33. temperature pro?les for large and small components 001aac844 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = msl limit, damage level peak temperature table 18. abbreviations acronym description btl bridge tied load dmos double diffused metal oxide semiconductor esd electrostatic discharge pwm pulse width modulation ocp overcurrent protection otp overtemperature protection ovp overvoltage protection se single ended ubp unbalance protection uvp undervoltage protection tf thermal foldback wp window protection
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 43 of 45 nxp semiconductors tda8932 class-d audio ampli?er 19. revision history table 19. revision history document id release date data sheet status change notice supersedes tda8932_2 20061212 preliminary data sheet - tda8932_1 modi?cations: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? type number tda8932tw has been deleted ? two new symbols and parameters in t ab le 9 ther mal char acter istics ? minor adaptions in application diagrams figure 29 , figure 30 and figure 31 tda8932_1 20060511 preliminary data sheet - -
tda8932_2 ? nxp b.v. 2006. all rights reserved. preliminary data sheet rev. 02 12 december 2006 44 of 45 nxp semiconductors tda8932 class-d audio ampli?er 20. legal information 20.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 20.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 20.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 20.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 21. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors tda8932 class-d audio ampli?er ? nxp b.v. 2006. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 12 december 2006 document identifier: tda8932_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 22. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . 2 5 ordering information . . . . . . . . . . . . . . . . . . . . . 2 6 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 7.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 functional description . . . . . . . . . . . . . . . . . . . 6 8.1 general . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.2 mode selection and interfacing . . . . . . . . . . . . . 6 8.3 pulse width modulation frequency . . . . . . . . . . 7 8.4 protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8.4.1 thermal foldback (tf) . . . . . . . . . . . . . . . . . . . 9 8.4.2 overtemperature protection (otp) . . . . . . . . . 9 8.4.3 overcurrent protection (ocp) . . . . . . . . . . . . . 9 8.4.4 window protection (wp). . . . . . . . . . . . . . . . . 10 8.4.5 supply voltage protection . . . . . . . . . . . . . . . . 10 8.5 diagnostic input and output . . . . . . . . . . . . . . 11 8.6 differential inputs . . . . . . . . . . . . . . . . . . . . . . 11 8.7 output voltage buffers. . . . . . . . . . . . . . . . . . . 12 9 internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . 13 10 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 17 11 thermal characteristics. . . . . . . . . . . . . . . . . . 17 12 static characteristics. . . . . . . . . . . . . . . . . . . . 18 13 dynamic characteristics . . . . . . . . . . . . . . . . . 20 14 application information. . . . . . . . . . . . . . . . . . 23 14.1 output power estimation. . . . . . . . . . . . . . . . . 23 14.2 output current limiting. . . . . . . . . . . . . . . . . . . 25 14.3 speaker con?guration and impedance . . . . . . 25 14.4 single-ended capacitor . . . . . . . . . . . . . . . . . . 25 14.5 gain reduction . . . . . . . . . . . . . . . . . . . . . . . . 26 14.6 device synchronization . . . . . . . . . . . . . . . . . . 27 14.7 thermal behavior (printed-circuit board considerations) . . . . . . . . . . . . . . . . . . . . . . . . 27 14.8 pumping effects . . . . . . . . . . . . . . . . . . . . . . . 29 14.9 se curves measured in reference design. . . . 30 14.10 btl curves measured in reference design . . . 32 14.11 typical application schematics (simpli?ed) . . . 35 15 test information . . . . . . . . . . . . . . . . . . . . . . . . 38 15.1 quality information . . . . . . . . . . . . . . . . . . . . . 38 16 package outline . . . . . . . . . . . . . . . . . . . . . . . . 39 17 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 17.1 introduction to soldering . . . . . . . . . . . . . . . . . 40 17.2 wave and re?ow soldering . . . . . . . . . . . . . . . 40 17.3 wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 40 17.4 re?ow soldering. . . . . . . . . . . . . . . . . . . . . . . 41 18 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 42 19 revision history . . . . . . . . . . . . . . . . . . . . . . . 43 20 legal information . . . . . . . . . . . . . . . . . . . . . . 44 20.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 44 20.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 20.3 disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 44 20.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 44 21 contact information . . . . . . . . . . . . . . . . . . . . 44 22 contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

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